Microstructure and electrical properties of XInZnO (X=Ti, Zr, Hf) films and device performance of their thin film transistors—The effects of employing Group IV-B elements in place of Ga
Moon, Mi Ran, Jeon, Haseok, Na, Sekwon, Kim, Sunho, Jung, Donggeun, Kim, Hyoungsub, Lee, Hoo-JeongVolume:
563
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2012.12.105
Date:
June, 2013
File:
PDF, 1.06 MB
english, 2013