Top-Gated Graphene Field-Effect Transistors with High...

ACS Nano 2011 / 06 Vol. 5; Iss. 6

Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage

Xu, Huilong, Zhang, Zhiyong, Xu, Haitao, Wang, Zhenxing, Wang, Sheng, Peng, Lian-Mao
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Volume:
5
Language:
english
Journal:
ACS Nano
DOI:
10.1021/nn201115p
Date:
June, 2011
File:
PDF, 1.57 MB
english, 2011
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