Techniques for Minimizing the Basal Plane Dislocation...

Materials Science Forum 2006 Vol. 527-529

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Sumakeris, Joseph J., Bergman, J. Peder, Das, Mrinal K., Hallin, Christer, Hull, Brett A., Janzén, Erik, Lendenmann, H., O'Loughlin, Michael J., Paisley, Michael J., Ha, Seo Young, Skowronski, Marek,
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.141
File:
PDF, 1.06 MB
english, 2006
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