[Advanced Texts in Physics] Silicon Carbide || Epitaxial Growth and Device Processing of SiC on Non-Basal Planes
Choyke, W. J., Matsunami, H., Pensl, G.Volume:
10.1007/97
Year:
2004
Language:
english
DOI:
10.1007/978-3-642-18870-1_30
File:
PDF, 809 KB
english, 2004