Surface-Potential-Based Drain Current Analytical Model for...

IEEE Transactions on Electron Devices 2012 / 12 Vol. 59; Iss. 12

Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, de Souza, Michelly, Das, Samaresh, Ferain, Isabelle, Pavanello, Marcelo Antonio
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2219055
Date:
December, 2012
File:
PDF, 1.36 MB
english, 2012
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