Gate-All-Around Junctionless Transistors With Heavily Doped...

IEEE Electron Device Letters 2011 / 04 Vol. 32; Iss. 4

Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels

Su, Chun-Jung, Tsai, Tzu-I, Liou, Yu-Ling, Lin, Zer-Ming, Lin, Horng-Chih, Chao, Tien-Sheng
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2107498
Date:
April, 2011
File:
PDF, 404 KB
english, 2011
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