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Surface recombination velocity of highly doped n-type silicon
Cuevas, AndreÌs, Basore, Paul A., Giroult-Matlakowski, GaeÌlle, Dubois, ChristianeVolume:
80
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.363250
File:
PDF, 351 KB
english, 1996