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n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-Al x Ga 1− x N electron-blocking layer
Zhang, Hezhi, Shen, Rensheng, Liang, Hongwei, Liu, Yuanda, Liu, Yang, Xia, Xiaochuan, Du, GuotongVolume:
46
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/46/6/065101
Date:
February, 2013
File:
PDF, 875 KB
english, 2013