Isotopic tracing study of the growth of silicon carbide...

Journal of Applied Physics 2009 Vol. 106; Iss. 2

Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO[sub 2]/Si interface by CO annealing

Pongracz, A., Hoshino, Y., D’Angelo, M., Cavellin, C. Deville, Ganem, J.-J., Trimaille, I., Battistig, G., Josepovits, K. V., Vickridge, I.
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Volume:
106
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3173278
File:
PDF, 511 KB
english, 2009
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