Epitaxial growth of heavily boron-doped Si by Al(B)-induced...

CrystEngComm 2013 Vol. 15; Iss. 9

Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturing

Wei, Sung-Yen, Lin, Hung-Hsi, Yu, Sheng-Min, Hsieh, Chien-Kuo, Tsai, Shuo-Cheng, Sun, Wen-Ching, Lin, Tzer-Shen, Tsai, Chuen-Horng, Chen, Fu-Rong
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Volume:
15
Year:
2013
Language:
english
Journal:
CrystEngComm
DOI:
10.1039/c2ce26563j
File:
PDF, 829 KB
english, 2013
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