Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric
Lin, Ray-Ming, Chu, Fu-Chuan, Das, Atanu, Liao, Sheng-Yu, Chou, Shu-Tsun, Chang, Liann-BeVolume:
544
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.01.028
Date:
October, 2013
File:
PDF, 868 KB
english, 2013