Design and Characterization of AlGaInAs/InP Buried...

Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-μm Wavelength

Sato, N., Shirao, M., Sato, T., Yukinari, M., Nishiyama, N., Amemiya, T., Arai, S.
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Volume:
19
Language:
english
Journal:
IEEE Journal of Selected Topics in Quantum Electronics
DOI:
10.1109/JSTQE.2013.2250490
Date:
July, 2013
File:
PDF, 5.97 MB
english, 2013
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