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High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
Liu, Yi-Yang, Song, Cheng-Li, Zeng, Wei-Jing, Zhou, Kai-Ge, Shi, Zi-Fa, Ma, Chong-Bo, Yang, Feng, Zhang, Hao-Li, Gong, XiongVolume:
132
Language:
english
Journal:
Journal of the American Chemical Society
DOI:
10.1021/ja107046s
Date:
November, 2010
File:
PDF, 437 KB
english, 2010