Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices
Mannequin, C., Gonon, P., ValleÌe, C., Bsiesy, A., Grampeix, H., Jousseaume, V.Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3662913
File:
PDF, 1.13 MB
english, 2011