Epitaxial growth of cubic and hexagonal GaN on GaAs by...

Applied Physics Letters 1991 Vol. 59; Iss. 9

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Okumura, H., Misawa, S., Yoshida, S.
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Volume:
59
Year:
1991
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.106344
File:
PDF, 713 KB
english, 1991
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