Monte Carlo simulation of 4H-SiC IMPATT diodes

Semiconductor Science and Technology 2000 / 11 Vol. 15; Iss. 11

Monte Carlo simulation of 4H-SiC IMPATT diodes

Zhao, J H, Gruzinskis, V, Luo, Y, Weiner, M, Pan, M, Shiktorov, P, Starikov, E
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Volume:
15
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/15/11/314
Date:
November, 2000
File:
PDF, 159 KB
english, 2000
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