Simulations of electron channeling in bent silicon crystal

Journal of Physics Conference Series 2013 / 06 Vol. 438

Simulations of electron channeling in bent silicon crystal

Sushko, G B, Bezchastnov, V G, Korol, A V, Greiner, Walter, Solov'yov, A V, Polozkov, R G, Ivanov, V K
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Volume:
438
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/438/1/012019
Date:
June, 2013
File:
PDF, 457 KB
english, 2013
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