Total Ionizing Dose Response of Triple-Well FET-Based...

IEEE Transactions on Nuclear Science 2013 / 8 Vol. 60; Iss. 4

Total Ionizing Dose Response of Triple-Well FET-Based Wideband, High-Isolation RF Switches in a 130 nm SiGe BiCMOS Technology

Cardoso, Adilson S., Chakraborty, Partha S., Lourenco, Nelson E., Song, Peter, England, Troy D., Kenyon, Eleazar W., Karaulac, Nedeljko, Cressler, John D.
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2013.2261318
Date:
August, 2013
File:
PDF, 1.42 MB
english, 2013
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