Quasi-double gate regime to boost UTBB SOI MOSFET...

Solid-State Electronics 2013 / 6 Vol. 84

Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications

Kilchytska, V., Bol, D., De Vos, J., Andrieu, F., Flandre, D.
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Volume:
84
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.02.018
Date:
June, 2013
File:
PDF, 1.93 MB
english, 2013
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