Electron effective mass and mobility in heavily doped...

Journal of Applied Physics 2008 Vol. 103; Iss. 10

Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering

Ibáñez, J., Cuscó, R., Alarcón-Lladó, E., Artús, L., Patanè, A., Fowler, D., Eaves, L., Uesugi, K., Suemune, I.
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Volume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2927387
File:
PDF, 504 KB
english, 2008
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