Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm...

IEEE Electron Device Letters 2010 / 10 Vol. 31; Iss. 10

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$

Corrion, A. L., Shinohara, K., Regan, D., Milosavljevic, I., Hashimoto, P., Willadsen, P. J., Schmitz, A., Wheeler, D. C., Butler, C. M., Brown, D., Burnham, S. D., Micovic, M.
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2058845
Date:
October, 2010
File:
PDF, 537 KB
english, 2010
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