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Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering
Kong, Yuechan, Zhou, Jianjun, Kong, Cen, Dong, Xun, Zhang, Youtao, Lu, Haiyan, Chen, TangshengVolume:
102
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4789868
File:
PDF, 1019 KB
english, 2013