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Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors
Matulionis, ArvydasVolume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/7/074007
Date:
July, 2013
File:
PDF, 1.10 MB
english, 2013