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Reliability studies of AlGaN/GaN high electron mobility transistors
Cheney, D J, Douglas, E A, Liu, L, Lo, C F, Xi, Y Y, Gila, B P, Ren, F, Horton, David, Law, M E, Smith, David J, Pearton, S JVolume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/7/074019
Date:
July, 2013
File:
PDF, 2.59 MB
english, 2013