AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal
Hahn, Herwig, Reuters, Ben, Kalisch, Holger, Vescan, AndreiVolume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/7/074017
Date:
July, 2013
File:
PDF, 671 KB
english, 2013