Properties of atomic layer deposited dielectrics for...

Semiconductor Science and Technology 2013 / 07 Vol. 28; Iss. 7

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Ramanan, Narayanan, Lee, Bongmook, Kirkpatrick, Casey, Suri, Rahul, Misra, Veena
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/7/074004
Date:
July, 2013
File:
PDF, 958 KB
english, 2013
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