Oxygen level: the dominant of resistive switching...

Journal of Physics D Applied Physics 2012 / 09 Vol. 45; Iss. 35

Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films

Younis, Adnan, Chu, Dewei, Li, Sean
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Volume:
45
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/45/35/355101
Date:
September, 2012
File:
PDF, 586 KB
english, 2012
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