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Low-Noise and High-Detectivity GaN-Based UV Photodiode With a Semi-Insulating Mg-Doped GaN Cap Layer
Chang, P. C., Yu, C. L., Chang, S. J., Lin, Y. C., Liu, C. H., Wu, S. L.Volume:
7
Language:
english
Journal:
IEEE Sensors Journal
DOI:
10.1109/JSEN.2007.901266
Date:
September, 2007
File:
PDF, 559 KB
english, 2007