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X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth
Sasaki, Takuo, Suzuki, Hidetoshi, Takahasi, Masamitu, Ohshita, Yoshio, Kamiya, Itaru, Yamaguchi, MasafumiVolume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3664832
File:
PDF, 1.40 MB
english, 2011