Insertion of a Si layer to reduce operation current for...

Applied Physics Letters 2013 Vol. 102; Iss. 25

Insertion of a Si layer to reduce operation current for resistive random access memory applications

Chen, Yu-Ting, Chang, Ting-Chang, Peng, Han-Kuang, Tseng, Hsueh-Chih, Huang, Jheng-Jie, Yang, Jyun-Bao, Chu, Ann-Kuo, Young, Tai-Fa, Sze, Simon M.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
102
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4812304
File:
PDF, 937 KB
english, 2013
Conversion to is in progress
Conversion to is failed