Plasmon-controlled optimum gate bias for GaN...

Semiconductor Science and Technology 2013 / 05 Vol. 28; Iss. 5

Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Šimukovič, A, Matulionis, A, Liberis, J, Šermukšnis, E, Sakalas, P, Zhang, F, Leach, J H, Avrutin, V, Morkoç, H
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/5/055008
Date:
May, 2013
File:
PDF, 659 KB
english, 2013
Conversion to is in progress
Conversion to is failed