![](/img/cover-not-exists.png)
Uniform and position-controlled InAs nanowires on 2 ′′ Si substrates for transistor applications
Ghalamestani, Sepideh Gorji, Johansson, Sofia, Borg, B Mattias, Lind, Erik, Dick, Kimberly A, Wernersson, Lars-ErikVolume:
23
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/23/1/015302
Date:
January, 2012
File:
PDF, 1.10 MB
english, 2012