Power Law Behavior in Amorphous Si:H and Si:D Due to...

Power Law Behavior in Amorphous Si:H and Si:D Due to Hopping-Randomwalk of Electrons in Localized Band Tail States in Random Fractal Fluctuation

K. Murayama, K. Ohno, Y. Ando, A. Matsuda
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Volume:
230
Year:
2002
Language:
english
Pages:
6
DOI:
10.1002/1521-3951(200203)230:13.0.co;2-j
File:
PDF, 115 KB
english, 2002
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