Tunnel Magnetoresistance above 170% and Resistance–Area Product of 1 Ω (µm) 2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
Maehara, Hiroki, Nishimura, Kazumasa, Nagamine, Yoshinori, Tsunekawa, Koji, Seki, Takayuki, Kubota, Hitoshi, Fukushima, Akio, Yakushiji, Kay, Ando, Koji, Yuasa, ShinjiVolume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.033002
Date:
March, 2011
File:
PDF, 266 KB
english, 2011