Drain-conductance optimization in nanowire TFETs by means...

Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.
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Volume:
84
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.02.012
Date:
June, 2013
File:
PDF, 675 KB
english, 2013
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