Interface state density of free-standing GaN Schottky...

Semiconductor Science and Technology 2010 / 09 Vol. 25; Iss. 9

Interface state density of free-standing GaN Schottky diodes

Faraz, S M, Ashraf, H, Imran Arshad, M, Hageman, P R, Asghar, M, Wahab, Q
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Volume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/9/095008
Date:
September, 2010
File:
PDF, 925 KB
english, 2010
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