Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate
Kim, Jaekyun, Tak, Youngjo, Kim, Joosung, Chae, Suhee, Kim, Jun-Youn, Park, YoungsooVolume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4812231
File:
PDF, 1.24 MB
english, 2013