Depth profiling of P shallow implants in silicon by electron-induced X-ray emission spectroscopy
Hombourger, Ch., Jonnard, Ph., Bonnelle, Ch., Staub, P.-F.Volume:
24
Language:
english
Journal:
The European Physical Journal Applied Physics
DOI:
10.1051/epjap:2003078
Date:
November, 2003
File:
PDF, 198 KB
english, 2003