Modelling of Polarization Charge-Induced Asymmetry of I–V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures
K.M. Indlekofer, E. Donà, J. Malindretos, M. Bertelli, M. Kočan, A. Rizzi, H. LüthVolume:
234
Year:
2002
Language:
english
Pages:
4
DOI:
10.1002/1521-3951(200212)234:33.0.co;2-h
File:
PDF, 85 KB
english, 2002