H, He, and N implant isolation of n-type GaN
Binari, S. C., Dietrich, H. B., Kelner, G., Rowland, L. B., Doverspike, K., Wickenden, D. K.Volume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.360712
File:
PDF, 723 KB
english, 1995