![](/img/cover-not-exists.png)
[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications
Micovic, M., Hashimoto, P., Hu, M., MilosavIjevic, I., Duvall, J., Willadsen, P.J., Wong, W.S., Conway, A.M., Kurdoghlian, A., Deelman, P.W., Moon, J.-S., Schmitz, A., Delaney, M.J.Year:
2004
Language:
english
DOI:
10.1109/IEDM.2004.1419298
File:
PDF, 214 KB
english, 2004