Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes
Li, Yun, Gao, You, He, Miao, Zhou, Jun, Lei, Yan, Zhang, Li, Zhu, Kebao, Chen, YulongVolume:
9
Language:
english
Journal:
Journal of Display Technology
DOI:
10.1109/JDT.2012.2226206
Date:
April, 2013
File:
PDF, 834 KB
english, 2013