Focussed ion beam induced damage in silicon studied by...

Semiconductor Science and Technology 2003 / 04 Vol. 18; Iss. 4

Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy

Brezna, W, Wanzenb ck, H, Lugstein, A, Bertagnolli, E, Gornik, E, Smoliner, J
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Volume:
18
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/18/4/301
Date:
April, 2003
File:
PDF, 165 KB
english, 2003
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