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Proton Implantation Induced Damage to Heavily Doped n-GaAs as Envisaged by Charge Deep-Level Transient Spectroscopy
I. Thurzo, E. Pincík, P. CicmanecVolume:
162
Year:
1997
Language:
english
Pages:
11
DOI:
10.1002/1521-396x(199708)162:23.0.co;2-a
File:
PDF, 262 KB
english, 1997