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[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - Lifetime and wearout current modeling of ultra-thin oxide antifuse bitcells using transient characterization
Deloge, Matthieu, Allard, Bruno, Candelier, Philippe, Damiens, Joel, Le-Roux, Elise, Rafik, MustaphaYear:
2010
Language:
english
DOI:
10.1109/IMW.2010.5488412
File:
PDF, 300 KB
english, 2010