Influence of the device geometry on the Schottky gate...

Semiconductor Science and Technology 2010 / 07 Vol. 25; Iss. 7

Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Lu, C Y, Bahat-Treidel, E, Hilt, O, Lossy, R, Chaturvedi, N, Chang, E Y, Würfl, J, Tränkle, G
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Volume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/7/075005
Date:
July, 2010
File:
PDF, 408 KB
english, 2010
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