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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - 10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and Vth tunability through thin BOX
Saitoh, Masumi, Ota, Kensuke, Tanaka, Chika, Uchida, Ken, Numata, ToshinoriYear:
2012
Language:
english
DOI:
10.1109/VLSIT.2012.6242436
File:
PDF, 396 KB
english, 2012