Numerical and experimental characterization of 4H-silicon...

Journal of Applied Physics 2006 Vol. 100; Iss. 4

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.
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Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2335967
File:
PDF, 661 KB
english, 2006
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