Monte Carlo simulation of electron transport in simple orthorhombically strained silicon
Wang, Xin, Kencke, D. L., Liu, K. C., Tasch, A. F., Register, L. F., Banerjee, S. K.Volume:
88
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1311304
File:
PDF, 520 KB
english, 2000