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Simulation of Semiconductor Devices and Processes || Modelling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects
Ryssel, Heiner, Pichler, PeterVolume:
10.1007/97
Year:
1995
Language:
english
DOI:
10.1007/978-3-7091-6619-2_100
File:
PDF, 547 KB
english, 1995